The Jipelec SiC Furnace has been developed for the high temperature processing of silicon carbide wafers up to 2000°C. The sample is processed in a glassy carbon or a silicon carbide coated graphite enclosure. This susceptor ensures purity environment to obviate any contamination of the samples.

The susceptor and the heating system have been designed to provide high temperature uniformity and long process capability.

The optical pyrometer and control system provides accurate and repeatable thermal control.

The SiC Furnace is provided with the Jipelec PIMS PC control.

The standard systems will process substrates up to 50 mm diameter. For larger diameter substrates a larger system is under development.

Applications:		Implantation annealing
Features:		Up to 50 mm wafers Pyrometer temperature control Atmospheric and vacuum process capability One purge gas line Up to 6 gas lines with MFC PC control Vacuum valve and vacuum gauge
Performance:		Temperature range: 700°C to 2000°C Ramp rate: up to 15°C/s
Optional features:		Vacuum pump Turbomolecular pumping unit