The Jipelec JetFirst has been specially developed to meet the requirements of universities and research laboratories. The temperature measurement and the control system provide accurate and repeatable thermal behavior from low to high temperature. The lamp array, upper flange and quartz window are mounted in a rotating top lid allowing full access to the chamber for easy loading and unloading of the wafers. Silicon carbide coated graphite susceptors are available for processing of small samples.

Spare chambers can be provided upon request to avoid cross contamination if several processes have to be performed in the same equipment.

The high reliability and high performance of the JetFirst allow utilization for small-scale production up to 5000 wafers per year.

Applications:		RTA: Annealing for silicon and III-V wafers RTO: Rapid Thermal Oxidation RTN: Rapid Thermal Nitridation RTD: Rapid Thermal Diffusion from spin-on dopants Crystallization Contact Alloying
Features:		Up to 300 mm - 12' wafers Cold wall chamber technology Pyrometer and thermocouple temperature control Atmospheric and vacuum process capability One purge gas line Up to 3 gas lines with MFC PC control Vacuum valve and vacuum gauge Turbopumping capabilities
Performance:		Temperature range: ambient to 1300°C Ramp rate: 1°C/s to 300°C/s Pyrometer control: 150°C to 1300°C