Material |
Applications |
Equipment |
Areas |
Level |
| SiNx (stress free) |
Sensors |
Active layer (membrane)
Etch stop layer |
TubeStar
JetStar
JetClip
|
Si Poly
Doped Si poly |
Memories
Thin film solar cells
Logic
Sensors |
Encapsulation
Poly emitter contact
Mechanical structure
Piezoresistive |
JetStar
JetClip |
Si Epi
Doped Si poly
Selective deposition |
Memories
Solar cells
Sensor
Logic
MOS-Bi CMOS-Bi Polar-HET |
Active layer
Contact |
JetClip |
SiO2 (Growth)
Ultra Thin Oxide |
Memories
Logic
Solar cells (passivation layer) |
Dielectrics
Gate oxide |
JetStar
JetClip
TubeStar |
| SiO2 Thick Layer (Deposition) |
Sensors
Microelectronics |
Sacrificial layer
Insulating layer
Field oxide |
JetStar
JetClip
TubeStar |
| SiO2 Nitrided (RTO/RTN) |
Microelectronics |
Insulating layer
ONO structure |
JetStar |
| SiON (RTCVD, LPCVD) |
ONO Structures
Waveguide
|
Dielectrics
Active layers
|
JetStar
JetClip
TubeStar |
| WSi2; TaN; TiN; WSiN; W (CVD); TiSi2 |
Microelectronics |
Barrier layer
Metallic contact |
JetStar
JetClip
TubeStar |
Silicide (RTA)
[WSi2; TiSi2; etc…] |
Microelectronics |
Metallic contact |
JetStar |
| SiGe, SiGeC |
Microelectronics
Solar cells |
SiGe, SiGeC Technology
HBT for RF-BICMOS |
JetClip |
| ZrO2 / HfO2/Ta2O5 |
Microelectronics |
High KDielectrics |
JetClip sg |
| RTA/RTO/RTN |
Microelectronics
Sensors
Test (Ex: Implantation)
III-V
II-VI |
All |
All products: depends on volume and throughput |
| SiC |
Power devices
Telecom
High frequency application |
Active layer |
SiC Furnace (RTA)
SiC CVD (RTA + CVD) |
| SiC Poly |
Sensors
Power devices |
Active layer |
JetStar
JetClip |
