The positive effect of low temperature UV annealing on the electrical properties of the Ta2O5 films deposited by UV-assisted Injection MOCVD (UV-IMOCVD) have been demonstrated:
The UV nitridation pre-deposition treatment in N2O atmosphere prevents or minimizes the growth of a SiO2 interlayer during the CVD and post-deposition anneal steps. This is achieved without degradation of JEeff characteristics of the gate stack.

The UV oxygen post-deposition annealing results in dramatic improvements in the physical properties: Leakage current densities are reduced by up to six orders of magnitude, while the deleterious carbon, silicon and nitrogen concentration in the films are reduced significantly (SNMS evidence).

These results have been obtained in a UV IMOCVD reactor developed in collaboration between JIPELEC, LMGP and UCL, in the context of the European IST-1999-10541 Project TOPS (Tantalum Pentoxide Photodeposition on Silicon) also including NMRC and Inorgtech.

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